Investigating the evolution of dislocated SiGe islands by selective wet‐chemical etching

Utilising selective wet chemical etching we uncover the Si surface below large, dislocated SiGe islands of the ‘super‐dome’ type. The island interface reveals a structure reminiscent of tree‐rings. The tree‐rings can be explained as a result of a cyclic growth mode, in which an island rapidly expands in lateral direction after introduction of a dislocation and then grows without lateral expansion until the next dislocation is introduced.