Preparation of TiOx thin films by reactive pulsed-laser ablation

We report here on the characterisation of TiO x thin films grown on glass and (100)Si substrates by reactive pulsed-laser ablation of a metallic Ti target. The specimens were prepared at two substrate temperatures (150 °Cand 500 °C) under O 2 atmosphere with pressures ranging between 1 and 100 mTorr. The films grown at 150 °C change from a mixture of nano-crystalline suboxides dispersed in an amorphous Ti film (when p 50 mTorr). The films deposited at 500 °C mainly consist of a mixture of crystalline (101) TiO 2 anatase and amorphous phases. The films structure and composition are interpreted in terms of successive oxidation processes a) in the ablation spot; b) in the plasma plume, and c) during condensation at substrate site.