DC and AC characteristics of a nonalloyed delta-doped MESFET by atomic layer epitaxy

The growth and fabrication of a nonalloyed delta-doped FET entirely grown by atomic layer epitaxy are reported. The DC and RF performances are shown to be comparable to similar devices fabricated on materials grown by other techniques. FETs having a gate length of 1.5 mu m show transconductances as high as 144 mS/mm at a current density of 460 mA/mm. The breakdown voltage for these devices is between 20 and 25 V for a gate-to-drain spacing of 1.6 mu m. An f/sub T/ and f/sub max/ of 13 and 19 GHz were obtained respectively. These values are among the highest values reported for MESFETs with similar geometry. >