Monolithic dual-gate GaAs FET amplifier

M. Kumar,G. C. Taylor,Ho-Chung Huang

Monolithic dual-gate GaAs FET amplifier

1981

M. Kumar
G. C. Taylor
Ho-Chung Huang

This paper presents the design, fabrication, and performance of a broad-band monolithic dual-gate GaAs FET amplifier. The amplifier has a gain of 3.5-5 dB over the 4.5- to 8-GHz band.

Keywords:

Amplifier
FET amplifier
Operational amplifier
Electronic engineering
Gallium arsenide
Integrated circuit
Field-effect transistor
Electrical engineering
Physics
Fabrication
dual gate
Optoelectronics

Correction
Source
Cite
Save
Machine Reading By IdeaReader

References

Citations