Characterization of self-patterned SrBi2Ta2O9 thin films from photo-sensitive solutions

Abstract Self-patterned SrBi2Ta2O9 thin films were successfully fabricated from photo-sensitive solutions by means of UV irradiation through photo masks. After conventional baking and wet etching the films were annealed. The photo-sensitive SrBi2Ta2O9 solutions give high resolution negative-pattern of the mask image down to 1 μm line width by deep UV irradiation at 900 mJ/cm2. The capacitor characteristics of the 210 nm thick films fabricated on the Pt/Ti/SiO2/Si substrates by this process showed 2Pr values of 17 μC/cm2, 2Ec of 89 kV/cm, and leakage current densities of 5×10−9 A/cm2 at 5 V. The films showed no fatigue after 1×1011 switching cycles.