Method for preparing polycrystalline silicon film

The invention discloses a method for preparing a polycrystalline silicon film, belonging to the field of film preparation realized through magnetron sputtering. The method is characterized in that the polycrystalline silicon film is prepared rapidly on a glass substrate at lower temperature by using a multi-target magnetron co-sputtering method; and compared with the traditional plasma enhanced chemical vapor deposition method for preparing the polycrystalline silicon film, the method disclosed by the invention can be used for avoiding the problems of complex process, environment pollution, high crystallization temperature, high energy consumption and the like. By using the method, the preparation of the polycrystalline silicon film can be finished in single magnetron sputtering equipment; and the method has the characteristics of simple process, high film deposition speed, low crystallization temperature, low required raw material cost, good film quality and the like, and has wide application prospects in the fields such as solar cell and integrated circuit manufacture and the like.