The Effect of Solute-Vacancy Pairs on the Physical Properties of Si Doped GaAs and Other Compound Semiconductor Systems.

Abstract : This is a report of a detailed and quantitative study of the influence of changes in specific defect concentrations on the microstructure and the electrical, optical and mechanical properties of Si-doped GaAs. Evidence for the Ga As: Si system demonstrates that quantitative correlations between Si-related defect concentrations and a diverse set of physical properties are observed. The measured changes in properties are large and have been employed to construct appropriate defect models. GaAs is a material of interest to the electronics community as it is used in a number of devices. The role of defects in affecting transport properties is of fundamental importance. The goal of this research is to obtain a more complete understanding of the defect structure of Si-doped GaAs through a quantitative correlation of various physical properties and concentrations of Si-related defects and also to track the effect of defect species such as solute vacancy pairs on several different physical properties. This final report summarizes the work of a 5 year study. (Author)