Oled top emission device anode structure and preparation process

The present invention relates to an organic light emitting diode manufacturing technical field, especially in the preparation of a top emission OLED device anode structure, characterized by comprising a four-layer film over a substrate, the substrate from the substrate are compatible up layer, the intermediate reflectivity of the layer, a modified energy level matching layer and the anode layer; using a multilayer film structure designed to achieve the versatility of the anode, significantly improved the light emission efficiency top-emitting OLED device, working life. Further, the present invention employs difficult to produce the preparation of the anode element diffusion material, lessen the probability of an element diffusion causes the device to a pixel short-circuit occurs; elemental metal used in the present invention, an alloy or a metal compound material has readily available, inexpensive, thin films means various other advantages.