Doping effects on thermal behaviour of silicon resistor

Doping effects on the thermal behaviour of a silicon resistor are studied using different models of hole mobility. The results indicate that the two thermal coefficients of the resistor are strongly dependent on doping concentration. For the first-order coefficient /spl alpha/, there is a minimal value (/spl sim/250 ppm//spl deg/C) for a particular doping concentration (/spl sim/4 /spl times/ 10/sup 18/ cm/sup -3/); for the second-order coefficient /spl beta/, its value decrease monotonously according to doping concentration, until zero.