GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range
2006
In the field of datacom, 10 Gbit/s sources with a good coupling in monomode silica fibers, whose
dispersion minimum occurs at 1.3 μm, are required. Vertical Cavity Surface Emitting Lasers (VCSELs)
emitting at 1.3 μm are key components in this field thanks to their compactness, their ability of being
operated at high frequencies, their low threshold current and their low beam divergence. Such devices
emitting in this wavelength range have been demonstrated using different materials such as strained
GaInAs/GaAs quantum wells [1-3], GaInNAs/GaAs quantum wells [4-7], InAs/GaAs quantum dots [8,
9], and antimonides [10], using either molecular beam epitaxy (MBE) or metalorganic vapor phase
epitaxy (MOVPE).
In the emerging field of photonics on CMOS, there is a need to bond efficient III-V laser sources on SOI wafers. These components should operate at small voltage and current, have a small footprint, and be
efficiently couple to Si waveguides, these latter being transparent above 1.1 μm. Since these
requirements resemble VCSEL properties, the development of VCSEL emitting above 1.1 μm could
therefore benefit to future new sources for photonics on silicon applications.
In this context we developed GaAs-based VCSELs emitting in the 1.1 μm - 1.3 μm range with
GaInAs/GaAs or GaInNAs/GaAs quantum wells (QWs) as the active materials.
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