Method of planarizing semiconductor device

PURPOSE: To obtain a semiconductor device, having a flat surface by coating an insulation material and then a diamond layer, and chemically-mechanically polishing these two layers. CONSTITUTION: An amorphous or crystalline SiO 2 is sputtered to form a first insulation layer over the entire surface structure, including circuit traces and pads, and diamond or diamond-like carbon is sputtered on this first insulation layer to form a second layer. These first and second layers are chemically- mechanically polished in an aqueous colloidal silica slurry, using a polishing pad having a Shore hardness of less than 70, until the entire is made flat. Residual C is removed by RIE or O 2 -ashing. Thus all protrudent parts of the device surface are planarized. COPYRIGHT: (C)1993,JPO