Lateral β-Ga2O3 Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics

Lateral β-Ga2O3 Schottky barrier diodes (SBDs) on an unintentionally doped (-201) n-type β-Ga2O3 single crystal were fabricated by designing L-shaped electrodes. By introducing sidewall electrodes on both sides of the conductive channels, the SBDs demonstrated high current density of 223 mA/mm and low specific on resistance of 4.7 mΩ·cm2. Temperature dependent performance was studied and the Schottky barrier height was extracted to between 1.3 eV and 1.35 eV at temperatures ranging from 20℃ to 150℃. These results suggest that the lateral β-Ga2O3 SBDs have tremendous potential for future power electronic applications.