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N-face (000-1) InN/GaN double heterostructures grown by MOVPE
N-face (000-1) InN/GaN double heterostructures grown by MOVPE
2016
Tetsuya Akasaka
Chia-Hung Lin
Hideki Yamamoto
Kazuhide Kumakura
Keywords:
Metalorganic vapour phase epitaxy
Heterojunction
Inorganic chemistry
Materials science
Indium nitride
Optoelectronics
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