Probing electron–electron interactions in multilayer epitaxial graphene grown on SiC using temperature-dependent Hall slope

Abstract We have studied electron–electron ( e – e ) interactions in multilayer graphene grown on SiC(0001). We find that the observed logarithmic temperature (ln  T ) dependence of the Hall slope is a good physical quantity for probing e – e interactions since it is not affected by electron–phonon scattering at high temperatures. By subtracting the weak localization correction term, we are able to study e – e interactions independently. It is found that the interaction correction terms determined by two methods, which both show ln  T dependences, agree better with each other in the high-temperature regime. Our approach is applicable to other two-dimensional materials which do not have buckled structures.