Fast Switching -Ga2O3 Power MOSFET with a Trench-Gate Structure

In this letter, trench-gate metal–oxide–semiconductor field-effect transistors on (010) $\beta $ -Ga2O3 epitaxial layer are fabricated. Enhancement mode is achieved by the gate-recess process, through thoroughly depleting the $\beta $ -Ga2O3 channel to get a positive threshold voltage. For the first time, by using a dynamic parameter test system, the Ga2O3 MOSFET with 2- $\mu \text{m}$ gate length is characterized to present short switching time, including turn-on time ( $\textit {t}_{ \mathrm{\scriptscriptstyle ON}}$ ) of 28.6 ns and turn-off time ( $\textit {t}_{ \mathrm{\scriptscriptstyle OFF}}$ ) of 94.0 ns. In addition, OFF-state interelectrode parasitic capacitances, including input capacitance ( $\textit {C}_{\text {iss}}$ ) of 37 pF/mm, output capacitance ( $\textit {C}_{\text {oss}}$ ) of 42 pF/mm, and reverse transfer capacitance ( $\textit {C}_{\text {rss}}$ ) of 14 pF/mm are also obtained, which can account for the high switching speed. The static and dynamic switching properties of the trench-gate device show the potential of $\beta $ -Ga2O3 MOSFET for the high-speed switching applications.