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GaN Through-substrate Via Process for GaN-on-GaN HEMTs using High-rate ICP Etching
GaN Through-substrate Via Process for GaN-on-GaN HEMTs using High-rate ICP Etching
2020
Naoya Okamoto
Atsushi Takahashi
Yuichi Minoura
Yusuke Kumazaki
Shiro Ozaki
Toshihiro Ohki
Keywords:
Materials science
Substrate (chemistry)
Etching
high rate
Optoelectronics
Correction
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