Depth-profile analysis from X-ray photoelectron spectroscopy on As-implanted ZnO activated in ozone ambient

Chemical bonds of As-implanted ZnO annealed in ozone molecular (O3) ambient were analyzed through the x-ray photoelectron spectroscopy as a function of the etching depth. With the etching depth increased to 25 nm from surface, the peaks of Zn2p and O1s core levels shifted toward the low-binding energy, and the bonding formation of As 3d core level gradually varied from As2O5 to As2O3. The new peaks were observed, which were posited to high-binding energy of 4.4 eV from Zn2p and O1s core levels. Finally, the chemical bonds of As-based oxides were found to consist of Zn(AsO3)2, As2O5, and As2O3. (© 2007 WILEY -VCH Verlag GmbH & Co. KGaA, Weinheim)