Paralleling six 320A 1200V All-SiC Half-bridge Modules for a Large Capacity Power Stack

We developed a 400V/400kW power stack by paralleling six 320A/1200V half-bridge all-SiC modules. Structural imbalance of parasitic inductance is contained within 3% in the laminated bus-bar with the aid of electromagnetics simulation. Switching dynamics in normal operation conditions and arm short circuit condition were investigated under a hard-switching driving scheme. Current imbalance less than 12% was ensured during both steady-state conduction and dynamic switching. Compared with conventional IGBTs, the switching loss of the all-SiC modules is reduced by more than 60%, and the switching frequency can be increased more than twice.