Effects of rapid thermal oxidation on electrical characteristics of chemical‐vapor‐deposited SiO2 gate dielectrics

In this paper, effects of rapid thermal oxidation (RTO) on electrical characteristics of thin (200 A) chemical‐vapor‐deposited (CVD) SiO2 have been studied. Current density‐electric field (J‐E) characteristics, flat‐band voltage, and gate voltage shifts under constant‐current stressing were also examined. Results show that RTO improves the charge trapping property of as‐deposited CVD oxides. In addition, RTO of CVD oxides also increases the electron injection barrier height of the as‐deposited samples at the cathode and produces devices with lower leakage current and tighter breakdown distribution.