Extended-wavelength 640 x 1 linear InGaAs detector arrays using N-on-P configuration for back illumination

Back-illuminated 640 x 1 linear InGaAs detector arrays were fabricated on the In0.78Al0.22As/In0.78Ga0.22 As material of N-on-P configuration by the inductively coupled plasma (ICP) etching. The photoelectric characteristics of the detector were investiga