Single Event Transients in Sub-10nm SOI MuGFETs due to Heavy-Ion Irradiation

We compare and report in this work heavy-ion irradiation induced single event transients (SETs) in sub-10nm node SOI multiple gate FETs with the help of calibrated 3-D TCAD simulations. Our analysis includes the nanosheet FET (NSFET), nanowire FET (NWFET), and FinFET along with two different device design modes based on the doping profiles, namely the inversion (INV) and junctionless mode (JL). We have also analyzed the impact of heavy-ion strike direction and angle of incidence on SET performance of various MuGFETs. Heavy-ion induced SET current has also been compared for multiple-sheet/wires of NSFET and NWFET. In addition to this, different locations of heavy-ion strike have also been considered in this work. Further, we have collated the simulation trends to propose empirical models that predict the impact of heavy-ion radiation on various MuGFETs. Our models include some of the device design parameters and heavy-ion exposure conditions as the input to the model. The proposed models are shown to correlate well with the TCAD simulation results for the set of model parameters that we have reported here. These models not only expedite the analysis, but these can also accurately predict SETs in advanced MuGFETs under heavy-ion irradiation.