Characterization of InP to GaInAs and GaInAs to InP interfaces using tilted cleaved corner TEM

Abstract The processes occurring during continuous and purged MOVPE growth of InP to GaInAs and GaInAs to InP interfaces have been investigated. Characterization was cleaved corner TEM, using tilted interface fringes observed in 202-type images which been investigated. Characterization was by cleaved corner TEM, using tiltedinterface fringes observed in 202-type images which give information on the sign and the magnitude of the mismatch. Structures with InP and GaInAs paused under both arsine and phosphine have also been examined to aid interpretation. The results indicate that under continuous growth conditions, the InP to GaInAs interface is positively mismatched, while the GaInAs to InP interface is negatively mismatched. It is suggested that this is due to rapid surface substitution of the group V species. At purged interfaces, additional, sub-surface substitution may also occur.