Change in the bulk resistivity of CdZnTe with selected near IR light

The change in bulk resistivity of CdZnTe (CZT) crystals was measured during infrared (IR) light between 950 and 1000 nm. The crystals are grown using one of the state-of-the-art methods either the traveling heating method or the modified Bridgman method. The change resistivity was evaluated using the steady-state current with and without light. Additionally, the change in current with both IR sources were correlated to the influence of secondary phases (SP) in each crystal using IR transmission microscopy to determine whether the number and size of the impurities has a drastic effect based on the current-voltage (IV) characteristics. SP at various depths within CZT are connected to the existence of variable depth, IR-excitable traps that lie within the bandgap. The release of these traps will significantly affect the overall current in the system. However, the current increase may not match the overall energy of the light utilized are more dependent on the size and quantity for each energy range.