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Characteristics of μ-Slice InGaN/GaN Light Emitting Diodes Formed by Focused Ion Beam Process
Characteristics of μ-Slice InGaN/GaN Light Emitting Diodes Formed by Focused Ion Beam Process
2010
C. K. Hsu
Jinn-Kong Sheu
J.K. Wang
M.L. Lee
K. H. Chang
S. J. Tu
W-C. Lai
Keywords:
Focused ion beam
Light-emitting diode
Wafer
Optoelectronics
Materials science
Optics
Correction
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