Binary and Attenuated PSM Mask evaluation for Sub 50nm Device Development Perspective

As the semiconductor industry continues progressing toward increasingly complex and unforgiving processes of device shrinkage and shorter duration of device development, many industry participants from photo-lithography are taking interest in material and structure of the photolithography mask. Due to shorter wavelength of the source laser and device technology ranging around the order of magnitude for the source laser wavelength (ArF), the difference in mask material and structure shows greater performance difference then larger technology node. Especially around 50nm and beyond, many industry followers are reporting better performance from different types of mask then previously used. In this study, we will analyze the effect of the photo lithography mask material for sub 50nm device, in development perspective. Two major types of mask will be evaluated on the scale of device development. Effects such as Mask Error Effect Factor (MEEF), Depth of Focus (DOF), Exposure Latitude (EL) and Critical Dimension Uniformity (CDU) will be analyzed for both binary and attenuated phase shifted mask under different process condition. Also, we will evaluate the comparison result for application on development of sub 45nm device.