High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure

High temperature electrical conductivity (HTEC) isotherms and isobars of ZnSe: In and of CdSe: In are compared. There are differencies in In-doping mechanisms of II-VI compounds. When HTEC isotherms and isobars of ZnSe: In and of CdSe: In, measured under metal component vapour pressure give both n-type conductivity then differences appear in the results of measurements under the selenium vapor pressure (p Se2 ). ZnSe: In isotherms in the last case are characterized by the conductivity type conversion but no such drastic change of HTEC type is observed on CdSe: In isotherms. Under the conditions of p Se2 , the activation energy of HTEC isobars for ZnSe: In is ΔE ≈ 1.3 -1.6 eV and for CdSe: In is ΔE ≈ 1.2 eV. The onefold ionized substitutional In at Zn place is proposed to be compensated by native defects in ZnS: In and in CdSe: In under high p Se2 . This native defect may be onefold ionized zinc vacancy for ZnSe: In and twofold ionized cadmium vacancy for CdSe: In. Association of defects occur at lower temperatures.