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Improvement of GaN crystalline quality by SiNx layer grown by MOVPE
Improvement of GaN crystalline quality by SiNx layer grown by MOVPE
2020
Alice Hospodková
Markéta Ziková
Tomáš Hubáček
Jiri Pangrac
K. Kuldová
František Hájek
Filip Dominec
Aliaksei Vetushka
Stanislav Hasenöhrl
Keywords:
Chemistry
Crystal
Metalorganic vapour phase epitaxy
Optoelectronics
Analytical chemistry
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