Ultra steep average subthreshold swing nano wire tunneling field effect transistor and method for preparing same

The present invention provides an ultra steep average subthreshold swing nano wire tunneling field effect transistor and a method for preparing the same which belong to the field effect transistor logic device field of the CMOS ultra large scale integration (ULSI). The tunneling field effect transistor adopts a nano wire structure of core-multilayered shell, and the material band gap of a multilayered shell part is increased continuously along the radius direction of the nano wire. According to the present invention, a subthreshold slope degradation phenomenon in a device transfer characteristic can be restrained effectively, at the same time, an average subthreshold slope of the tunneling field effect transistor is reduced remarkably, and a more steep minimum subthreshold slope is kept.