Monte Carlo simulation of photoexcited carriers in InAs thin films

We have performed Monte Carlo simulation of photoexcited carriers in InAs thin films to investigate effects of the film thickness on the carrier dynamics. We find that the peak value of the time derivative of the current increases (decreases) as the film thickness decreases when the thickness is less than ∼200 nm, under the boundary condition that only holes (both electrons and holes) are confined in the film