Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100
2001
Long and fairly uniform quantum wire arrays have been fabricated by the growth of (In,Ga)As/GaAs multilayer structures. The structural properties of the quantum wires are characterized by atomic force microscopy, x-ray diffractometry, and transmission electron microscopy. The lateral carrier confinement in the quantum wires is confirmed by linear polarization dependent photoluminescence (PL) and magneto-PL measurements.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
13
References
41
Citations
NaN
KQI