Sn Incorporation in Ultrathin InAs Nanowires for Next-Generation Transistors Characterized by Atom Probe Tomography

Growth of ultrathin semiconducting nanowires (NWs) and incorporation of dopants suitable for future CMOS scaling targets (diameter <20 nm) is a challenge. Limits on dopant incorporation in thin NWs have led to concerns about the suitability of these structures. In this work, the atomic structure of the thinnest InAs NWs ever reported, down to 7 nm diameter, is characterized using transmission electron microscopy (TEM) and atom probe tomography (APT). It is demonstrated that there is no fundamental limit of Sn incorporation into ultrathin InAs NWs. Additionally, the Sn distribution of the Au catalyst particle controlling the growth is characterized.