The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0 0 0 1) Si-face substrates

Abstract In this paper, homoepitaxial growth was performed on on-axis, 4° and 8° off-axis 4H-SiC (0001) Si-face substrate by using our home-made vertical hot wall LPCVD reactor and SiH 4  + C 2 H 4  + H 2  + HCl gas system. The influence mechanism of growth temperature on the crystal quality, the growth rate and surface morphology is studied. The growth rate increased with the increase of growth temperature, and the epitaxial wafer surface morphology is more excellent by the increasing of off-angle. The results demonstrate that growth temperature is a fundamental process parameter to optimize.