Room temperature UV emission of MgxZn1-xO films

Abstract II–VI wide band-gap semiconductor ternary Mg x Zn 1− x O nanocrystalline films have been successfully formed on conductive glass from ZnO powder by electrophoresis deposition (EDP). In comparison with ZnO powder, the Mg x Zn 1− x O films presented a more preferential crystalline orientation. Room temperature (RT) PL spectra of Mg x Zn 1− x O films revealed a stronger band-edge ultraviolet (UV) emission and a narrower FWMH of 13 nm than that of ZnO powder. The UV emission peak of Mg x Zn 1− x O film is located at the range of 375–381 nm with a small blue shift from that of ZnO powder. In addition, the ratio of PL peak intensity of band-edge emission to the deep-level emission in Mg x Zn 1− x O films reached as high as 135:1 while compared with 23:1 of ZnO powder under the same He–Cd laser excitation level. Consequently, these electrophoretic deposition (EPD) Mg x Zn 1− x O films exhibited a good quality for excitonic emission at RT.