Radiation-resistant static random access memory (SRAM) sequential control circuit and sequential processing method therefor

The invention discloses a radiation-resistant static random access memory (SRAM) sequential control circuit and a sequential processing method therefor. The radiation-resistant SRAM sequential control circuit solves the problem of poor reliability of the existing radiation-resistant SRAM sequential control circuit in a radiation environment. A technical scheme of the radiation-resistant SRAM sequential control circuit provided by the invention comprises that a memory cell row and a memory cell line are added in a memory array and are used for tracking states of key signal lines comprising word lines and bit lines of a memory; in each read-write process, the memory selects a row and a line in a tracking unit and feeds back states of word lines and bit lines of the tracking unit to a sequential control unit; and the sequential control unit realizes data writing and reading according to a feedback signal and a SRAM internal sequential control signal produced by an input clock. Because of utilization of a memory cell tracking technology, the whole time sequence can be adjusted automatically by change of a memory rate. Through the sequential processing method for the radiation-resistant SRAM sequential control circuit, when a working rate of an internal circuit of a SRAM is influenced under the radiation, a correct sequential signal can still be produced so that incorrect operation is avoided.