Gallium Arsenide Photonic Integrated Circuit Platform for 1030 nm Applications

Paul Verrinder,Lei Wang,Joseph Fridlander,Fengqiao Sang,Victoria Rosborough,Michael Nickerson,Guangning Yang,Mark A. Stephen,Larry A. Coldren,Jonathan Klamkin

Gallium Arsenide Photonic Integrated Circuit Platform for 1030 nm Applications

2021

Paul Verrinder
Lei Wang
Joseph Fridlander
Fengqiao Sang
Victoria Rosborough
Michael Nickerson
Guangning Yang
Mark A. Stephen
Larry A. Coldren
Jonathan Klamkin

An active-passive integration platform on GaAs is demonstrated with Fabry Perot lasers exhibiting up to 240 mW total output power, 98.8% injection efficiency, and 3.44 cm-1 active loss for operation near 1030 nm.

Keywords:

Optoelectronics
Integration platform
Power (physics)
Fabry–Pérot interferometer
Photonic integrated circuit
Free-space optical communication
Laser
Gallium arsenide
Materials science

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