CHARACTERIZATION OF Cu(In,Ga)(S,Se2) SOLAR CELLS

Significant progresses of these twenty last years allowed a considerable development of solar cells in thin films, in particular chalcopyrite materials. Indeed, these materials are regarded as polycrystalline materials leaders in term of efficiency and profitability for the production of solar cells in the form of thin films for terrestrial or space application. The start of production at several places provides a new challenge for research on these materials. However, the development of the solar industry depends not only on device efficiency, but also on the development of techniques, which must be compatible with requirements of large area and low cost processing. Electrodeposition has the potential to be alternative to vacuum based processes [1]. In this paper, we present a comparative study of Cu(In,Ga)(S,Se 2 ) solar cells with brome treatment prepared by co evaporation and CuInSe 2 (CIS) electrodeposited. The results obtained show that the electrodeposited cellules (CIS) have a efficiency higher of 10% which is a good for this type of cell with Voc= 718mV, Jsc= 22,3 mA/cm 2 , FF= 66%. For co evaporated CIGS solar cells treated with brome their efficiency reaches the 14% with Voc= 665mV, Jsc= 28,04mA/cm 2 and FF= 77,2%. The properties of these cells are presented.