Solution Processed of Solid State HTL of CuSCN Layer at Low Annealing Temperature for Emerging Solar Cell

High density and uniform Hole Transport Layer (HTL) Copper (I) thiocyanate (CuSCN) was prepared directly on Indium-doped Tin Oxide (ITO) substrate through two-step spin coating technique and followed by low temperature annealing process. A new solvent of Monoethanolamine (MEA) with no additive was introduced for the preparation and yet producing a comparable result of HTL for perovskite solar cell application. The CuSCN layer was characterized for its surface morphology, crystallinity and optical features by using Scanning Electron Microscope (SEM), X-Ray Diffraction (XRD) and Ultraviolet-Visible Spectroscopy (UV-Vis) respectively. Furthermore, the resistivity of the layer was also measured by I-V measurement. An optimized annealing temperature of 100 °C is obtained, resulting pristine morphology structure and high conductivity of 77.30 S/m. This paper is the first to report the use of MEA as a solvent for CuSCN layer, showing that the right combination of solvent use and annealing temperature can produce a good CuSCN structure. Thus, being able to produce HTL layers more easily, rapid and at minimal cost, in turn having a positive impact in reducing the cost of solar cell production.