Development of a 100keV electron beam nanolithography system

Abstract A wide range energy (25, 50, 100keV) electron beam lithography system with ZrO W Schottky electron source and UHV chamber has been developed. The electron probe stability of 2.5%/hour is measured, and a beam diameter of 3nm is confirmed at 100keV beam energy. The ultimate pressure of bakeable work chamber is confirmed to reach 4×10 −10 Torr. With the UHV chamber and a gas jet nozzle, this system allows to perform in-situ electron beam nanolithography by combining with UHV multichamber systems.