Three-junction solar cell with quantum well structure

The invention discloses a three-junction solar cell with a quantum well structure. The three-junction solar cell sequentially comprises a first subsidiary cell as a substrate, a first tunnel junction, a second subsidiary cell, a second tunnel junction and a third subsidiary cell. Lattice matching is adopted among the three subsidiary cells, and the three subsidiary cells are connected through the tunnel junctions. The first subsidiary cell is a Ge cell, the second subsidiary cell is an InxGa1-xNyAs1-y/GaAs quantum well cell, and the third subsidiary cell is a GaInP cell. According to the solar cell, the formed energy band gap combination is about 0.67 eV/1.3 eV/1.8 eV, the energy band gap difference delta Eg1 of the second subsidiary cell and the first subsidiary cell is about 0.63, the energy band gap difference delta Eg2 of the third subsidiary cell and the second subsidiary cell is about 0.5 eV, and the two energy band gap differences are more approximate; moreover, the energy band gap of the third subsidiary cell GaInP is about 1.8 eV, more photons can be absorbed in comparison with a traditional GaInP cell, and therefore currents of the three subsidiary cells can be distributed more evenly.