A comparative study on radiation reliability of composite channel InP high electron mobility transistors

This paper proposes a reasonable radiation-resistant composite channel structure for InP HEMTs. The simulation results show that the composite channel structure has excellent electrical properties due to increased modulation doping efficiency and carrier confinement. Moreover, direct current (DC) and radio frequency (RF) characteristics and their reliability compared in detail between the single channel structure and the composite channel structure after 75-keV proton irradiation. The results show that the composite channel structure has excellent radiation tolerance. Mechanism analysis demonstrates that the composite channel structure weakens the carrier removal effect. This phenomenon could be accounted for the increase of native carrier and the decrease of defect capture rate.