Electrical Measurements By Scanning Spreading Resistance Microscopy: Application To Carbon Nanofibers And Si Nanowires

We report the electrical characterization of vertically aligned nano‐objects by Scanning Spreading Resistance Microscopy (SSRM). In this paper, we show that this method is well suited to evaluate the individual electrical properties of carbon nanofibers and of n‐doped silicon nanowires. In the first example, carbon nanofibers exhibit a wide range of resistance which could be explained by the convolution of roughness and of surface oxidation of the TiN layer. An interpretation based on electrical contact resistance model is proposed here to explain this observation. In the second example, n‐doped Si NWs exhibit various range of resistance depending of the Phosphorus/Silicon ratio, which highlighted the control of the doping level.