Resist outgassing contamination on EUV multilayer mirror analogues
2014
EUV lithography is a technology enabling next generation electronic devices, but issues with photoresist sensitivity,
resolution and line edge roughness as well as tool downtime and throughput remain. As part of the industry's efforts to
address these problems we have worked with resist suppliers to quantify the relative contamination rate of a variety of
resists on EUV multilayer mirror analogues following ASML approved protocols. Here we present results of our
ongoing program to better understand the effect of process parameters such as dose and resist thickness on the
contamination rate of ruthenium coated witness plates, additionally we present results from a study on the effectiveness
of hydrogen cleaning.
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