Control over the optical and electronic performance of GaAs/AlGaAs QWIPs grown by production MBE

Abstract Commercial production of quantum well infrared detectors (QWIPs) requires targeting specific detector dark current densities and cutoff wavelengths. Molecular beam epitaxy (MBE) allows a tight control over the quantum-well structure. This manuscript discusses the growth of the long-wave infrared (LWIR) QWIP detectors on the multi-wafer MBE reactors at IntelliEpi. We address the tuning of the cutoff wavelength by adjusting of the thickness of the GaAs quantum well (QW) layer and the composition of the AlGaAs barrier. The control over the dark current densities is examined through the correlation with the doping levels and the detector cutoff wavelength.