A 104μW EMI-resisting bandgap voltage reference achieving −20dB PSRR, and 5% DC shift under a 4dBm EMI level

This paper describes an electromagnetic interference (EMI)-resisting Bandgap voltage reference. Its basic topology is a Kuijk Bandgap with a PMOS pass device and an active load, improved to generate a low voltage output (441.3mV) via substituting BJT by MOSFET while preserving a low temperature coefficient (TC). A double differential pair and a power-supply independent bias jointly enhance the EMI resisting ability. Simulated in 65nm CMOS, the achieved PSRR is −20dB, TC is 10.65 ppm/°C and DC shift is 5% up to a 4dBm EMI level. The total power consumption is 104μW.