Structural characterization and optical parameter of silicon phthalocyanine dichloride thin films dependence with gamma ray radiation

Abstract Silicon phthalocyanine dichloride (SiPcCl2) thin films was prepared using thermal evaporation technique. The optical and structural properties of the films were examined before and after gamma irradiation process. X-ray diffraction (XRD), Fourier-transform infrared (FTIR) and Scanning electron microscope (SEM) investigated the structure of SiPcCl2. Moreover, optical properties were studied before and after irradiation. The optical band gap decreased from 2.44 eV to 2.09 eV after irradiation with 5 KGy. The dispersion parameters like the infinity e ∞ , lattice e L dielectric constants, dispersion energy Ed, the ratio of carrier concentration to the effective mass N/m*, oscillator energy Eo were evaluated. Furthermore, the relation of volume energy loss functions VELF, the surface energy loss functions SELF, the real part e 1 and imaginary part e 2 of the dielectric constant with photon energy, hυ was analyzed.