Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates

Growth of low defect density highly strained InxGa1−xAs/GaAs multiple quantum well (MQW) structures of thicknesses suited for application in spatial light modulator (SLM) devices operating in infrared has been thwarted by the occurrence of strain‐induced defects. Exploiting the notion of strain relief at mesa edges, we report here the first realization of very low defect density MQW structures of thickness as high as 2.38 μm at x=0.20. This has opened up the possibility of realizing a variety of reflective and transmissive SLM structures which also fruitfully exploit the transparent nature of the substrate.