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MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate
MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate
1996
Akihiko Ishibashi
Hidemi Takeishi
Nobuyuki Uemura
Masahiro Kume
Yuzaburoh Ban
Keywords:
Substrate (chemistry)
Metalorganic vapour phase epitaxy
Optoelectronics
Quantum well
Materials science
Molecular physics
sic substrate
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