Study on Mechanisms of SiO 2 -CMP

Polishing slurries for SiO 2 -CMP have been found to specifically enhance the material removal rate for SiO 2 under certain condition. By extracting its key parameter, further enhancement of the removal rate for SiO 2 is expected. In this study, key parameters to enhance removal rate for SiO 2 were investigated based on the consideration of the polishing mechanisms of SiO 2 . It was found that the most effective parameter was the adhesion force of abrasive particles to SiO 2 .