Correlation of film thickness and deposition temperature with PAI and the scalability of Ti-salicide technology to sub-0.18 /spl mu/m regime

We present the first working solutions for a sub-0.25 /spl mu/m Ti-salicide process incorporating /sup 14/Si or Ar/sup +/ PAI (preamorphization implant). Various film stack thicknesses, collimated deposition temperatures, and key PAI process parameters are studied and evaluated. The use of high-temperature PVD with PAI is emphasized to yield devices with low gate sheet resistance and tight leakage distributions.