Avalanche instability in oxide charge balanced power MOSFETs

Power MOSFET designs have been moving to higher performance particularly in the medium voltage area. (60V to 300V) New designs require lower specific on-resistance (R SP ) thus forcing designers to push the envelope of increasing the electric field stress on the shielding oxide, reducing the cell pitch, and increasing the epitaxial (epi) drift doping to reduce on resistance. In doing so, time dependant avalanche instabilities have become a concern for oxide charge balanced power MOSFETs. Avalanche instabilities can initiate in the active cell and/or the termination structures. These instabilities cause the avalanche breakdown to increase and/or decrease with increasing time in avalanche. They become a reliability risk when the drain to source breakdown voltage (BV dss ) degrades below the operating voltage of the application circuit. This paper will explain a mechanism for these avalanche instabilities and propose an optimum design for the charge balance region. TCAD simulation was employed to give insight to the mechanism. Finally, measured data will be presented to substantiate the theory.